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N-Channel 100 V (D-S) MOSFET
Si2324DS
Vishay Siliconix
MOSFET PRODUCT SUMMARY
VDS (V)
RDS(on) ()
ID (A)a
0.234 at VGS = 10 V
2.3
100
0.267 at VGS = 6 V
2.1
0.278 at VGS = 4.5 V
1.7
Qg (Typ.) 2.9 nC
TO-236 (SOT-23)
G1 S2
3D
FEATURES • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Material categorization:
For definitions of compliance please see www.vishay.
SI2324DS Datasheet
