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Si2320DS
New Product
Vishay Siliconix
N-Channel 200-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
200
rDS(on) (W)
7 @ VGS = 10 V
ID (A)
"0.28
TO-236 (SOT-23)
G
1 3 D
S
2
Top View Si2320DS (D0)* *Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Currentb Avalanche Currentb L = 0.1 mH Single Avalanche Energy Continuous Source Current (Diode Conduction)a Power Dissipationa Operating Junction and Storage Temperature Range TA= 25_C TA= 70_C TA= 25_C TA= 70_C
Symbol
VDS VGS ID IDM IAS EAS IS
5 sec
"20 "0.28 "0.22
Steady State
"200
Unit
V
"0.22 "0.17 "0.5 "0.5 0.013 "1 mJ A 0.75 W 0.48 –55 to 150 _C A
1.25 PD TJ, Tstg 0.
SI2320DS Datasheet
