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SI2321DS - P-Channel Enhancement MOSFET

Key Features

  • s.
  • VDS (V) =-20V.
  • ID =-3.3A (VGS =-4.5V).
  • RDS(ON) ＜ 57mΩ (VGS =-4.5V).
  • RDS(ON) ＜ 76mΩ (VGS =-2.5V).
  • RDS(ON) ＜ 110mΩ (VGS =-1.8V) G1 S2 3D +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 1.Gate 2.Source 3.Drain 0-0.1 +0.1 0.38 -0.1.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Ta = 25℃.

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SMD Type P-Channel Enhancement MOSFET SI2321DS (KI2321DS) MOSFET ■ Features ● VDS (V) =-20V ● ID =-3.3A (VGS =-4.5V) ● RDS(ON) ＜ 57mΩ (VGS =-4.5V) ● RDS(ON) ＜ 76mΩ (VGS =-2.5V) ● RDS(ON) ＜ 110mΩ (VGS =-1.8V) G1 S2 3D +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 1.Gate 2.Source 3.Drain 0-0.1 +0.1 0.38 -0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Ta = 25℃ Ta = 70℃ Pulsed Drain Current Power Dissipation Ta = 25℃ Ta = 70℃ Thermal Resistance.Junction- to-Ambient t≤5 sec Steady State Thermal Resistance.