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P-Channel 20-V (D-S) MOSFET
Si2323DDS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) () Max.
0.039 at VGS = - 4.5 V
- 20
0.050 at VGS = - 2.5 V
0.075 at VGS = - 1.8 V
TO-236 (SOT-23)
ID (A)d - 5.3 - 4.7 - 3.8
Qg (Typ.) 13.6 nC
G1 S2
3D
FEATURES • TrenchFET® Power MOSFET
• 100 % Rg Tested • Material categorization:
For definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS
• Load Switch • PA Switch • DC/DC Converters • Power Management
S G
Top View
Si2323DDS (E4)* * Marking Code
Ordering Information: Si2323DDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
- 20
V
VGS
±8
TC = 25 °C
- 5.
Si2323DDS Datasheet
