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SI2325DS Datasheet P-channel Enhancement MOSFET

Manufacturer: Kexin Semiconductor

Overview: SMD Type P-Channel Enhancement MOSFET SI2325DS (KI2325DS) ■.

Key Features

  • s.
  • VDS (V) =-150V.
  • ID =-0.69A (VGS =-10V).
  • RDS(ON) ＜ 1.2Ω (VGS =-10V).
  • RDS(ON) ＜ 1.3Ω (VGS =-6V) G1 S2 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 +0.1 2.4 -0.1 3D 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 MOSFET Unit: mm 0.1 +0.05 -0.01 1.Gate 2.Source 3.Drain 0-0.1 +0.1 0.38 -0.1.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Ta = 25℃ Ta = 70℃ Pulsed Drain Curren.

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