Datasheet4U Logo Datasheet4U.com

SI2325DS - P-Channel Enhancement MOSFET

Key Features

  • s.
  • VDS (V) =-150V.
  • ID =-0.69A (VGS =-10V).
  • RDS(ON) ＜ 1.2Ω (VGS =-10V).
  • RDS(ON) ＜ 1.3Ω (VGS =-6V) G1 S2 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 +0.1 2.4 -0.1 3D 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 MOSFET Unit: mm 0.1 +0.05 -0.01 1.Gate 2.Source 3.Drain 0-0.1 +0.1 0.38 -0.1.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Ta = 25℃ Ta = 70℃ Pulsed Drain Curren.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SI2325DS 150V P-Channel MOSFET Vishay
SI2320DS N-Channel MOSFET Vishay Siliconix
SI2321 P-Channel MOSFET MCC
SI2321 P-CHANNEL MOSFET BLUE ROCKET ELECTRONICS
SI2321DS P-Channel MOSFET Vishay Siliconix

Other Datasheets by Kexin Semiconductor

Part Number Description
SI2321DS P-Channel Enhancement MOSFET
SI2323DS P-Channel Enhancement MOSFET
SI2324DS N-Channel Enhancement MOSFET
SI2328DS N-Channel Enhancement MOSFET
SI2300 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type P-Channel Enhancement MOSFET SI2325DS (KI2325DS) ■ Features ● VDS (V) =-150V ● ID =-0.69A (VGS =-10V) ● RDS(ON) ＜ 1.2Ω (VGS =-10V) ● RDS(ON) ＜ 1.3Ω (VGS =-6V) G1 S2 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 +0.1 2.4 -0.1 3D 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 MOSFET Unit: mm 0.1 +0.05 -0.01 1.Gate 2.Source 3.Drain 0-0.1 +0.1 0.38 -0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Ta = 25℃ Ta = 70℃ Pulsed Drain Current Single-Pluse Avalanche Current L=1.0mH Single-Pulse Avalanche Energy L=1.0mH Power Dissipation Ta = 25℃ Ta = 70℃ Thermal Resistance.Junction- to-Ambient t≤5 sec Steady State Thermal Resistance.