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Si4493DY
New Product
Vishay Siliconix
P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
- 20 0.01225 @ VGS = - 2.5 V - 11
FEATURES
ID (A)
- 14
rDS(on) (W)
0.00775 @ VGS = - 4.5 V
D TrenchFETr Power MOSFET
APPLICATIONS
D Load Switch
S
SO-8
S S S G 1 2 3 4 Top View D Ordering Information: Si4493DY Si4493DY-T1 (with Tape and Reel) P-Channel MOSFET 8 7 6 5 D D D D
G
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID - 11 IDM IS - 2.7 3.0 1.9 - 55 to 150 - 50 - 1.36 1.5 0.
SI4493DY Datasheet
