SI4493DY
SI4493DY is P-Channel MOSFET manufactured by Vishay.
FEATURES
ID (A)
- 14 r DS(on) (W)
0.00775 @ VGS =
- 4.5 V
D Trench FETr Power MOSFET
APPLICATIONS
D Load Switch
SO-8
S S S G 1 2 3 4 Top View D Ordering Information: Si4493DY Si4493DY-T1 (with Tape and Reel) P-Channel MOSFET 8 7 6 5 D D D D
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID
- 11 IDM IS
- 2.7 3.0 1.9
- 55 to 150
- 50
- 1.36 1.5 0.95 W _C -8 A
Symbol
VDS VGS
10 secs
Steady State
- 20 "12
Unit
- 14
- 10
THERMAL RESISTANCE RATINGS
Parameter t v 10 sec M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72256 S-31420- Rev. A, 07-Jul-03 .vishay. Steady State Steady State Rth JA Rth JF
Symbol
Typical
33 70 16
Maximum
42 84 21
Unit
_C/W
Vishay Siliconix
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