SI6969BDQ Datasheet | Vishay

New Product Vishay Siliconix Dual P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) r DS(on) (W) 0.030 @ VGS = -4.5 V -12 0.040 @ VGS = -2.5 V 0.055 @ VGS = -1.8 V ID (A) -4.6 - 3.8 - 3.0 S1 S2 .. TSSOP-8 D1 S1 S1 G1 1 2 3 4 Top View D1 P-Channel MOSFET D2 P-Channel MOSFET D 8 D2 7 S2 6 S2 5 G2 G1 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 10 secs -12 "8 - 4.6 Steady State Unit -4.0 -3.2 -30 A -0.7 0.83 0.53 -55 to 150 W _C ID IDM IS PD TJ, Tstg -3.8 -1.0 1.14 0.73 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72017 S-22051- Rev. B, 18-Nov-02 .vishay. Steady State Steady State Rth JA Rth JF Symbol Typical 88 120 65 Maximum 110 150 80 Unit _C/W Vishay...