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SI6969BDQ - Dual P-Channel 1.8-V (G-S) MOSFET

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Part number SI6969BDQ
Manufacturer Vishay Siliconix
File Size 76.01 KB
Description Dual P-Channel 1.8-V (G-S) MOSFET
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Si6969BDQ New Product Vishay Siliconix Dual P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.030 @ VGS = -4.5 V -12 0.040 @ VGS = -2.5 V 0.055 @ VGS = -1.8 V ID (A) -4.6 - 3.8 - 3.0 S1 S2 www.DataSheet4U.com TSSOP-8 D1 S1 S1 G1 1 2 3 4 Top View D1 P-Channel MOSFET D2 P-Channel MOSFET D 8 D2 7 S2 6 S2 5 G2 G1 G2 Si6969BDQ ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 10 secs -12 "8 - 4.6 Steady State Unit V -4.0 -3.2 -30 A -0.7 0.83 0.
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