SI6969DQ Datasheet | Vishay

Vishay Siliconix Dual P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) - 12 r DS(on) (W) 0.034 @ VGS = - 4.5 V 0.050 @ VGS = - 2.5 V 0.075 @ VGS = - 1.8 V ID (A) "4.6 "3.8 "3.0 S1 S2 .. D1 S1 S1 G1 1 2 3 4 D TSSOP-8 8 D2 7 S2 6 S2 5 G2 Top View D1 D2 G1 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit - 12 "8 "4.6 "3.8 "30 - 1.25 1.1 0.72 - 55 to 150 Unit W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambienta Notes a. Surface Mounted on FR4 Board. b. t v 10 sec. Document Number: 70828 S-59527- Rev. A, 19-Oct-98 .vishay. t v 10 sec Steady State Rth JA 115 Symbol Typical Maximum Unit _C/W 2-1...