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SIHFL014T - Power MOSFET

General Description

SOT-223 D S S N-Channel MOSFET G D G Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniques.

Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performace due to an enlarged tab for heatsinking.

Overview

www.DataSheet.co.kr IRFL014, SiHFL014 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 11 3.1 5.

Key Features

  • 60 0.20.
  • Halogen-free According to IEC 61249-2-21 Definition.
  • Surface Mount.
  • Available in Tape and Reel.
  • Dynamic dV/dt Rating.
  • Fast Switching.
  • Ease of Paralleling.
  • Simple Drive Requirements.
  • Compliant to RoHS Directive 2002/95/EC.