SiHFL110 Datasheet | Vishay

.vishay. IRFL110, Si HFL110 Vishay Siliconix Power MOSFET SOT-223 S N-Channel MOSFET Marking code: FB PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (n C) Qgs (n C) Qgd (n C) Configuration 100 VGS = 10 V 8.3 2.3 3.8 Single Features - Surface-mount - Available in tape and reel - Dynamic d V/dt rating - Repetitive avalanche rated - Fast switching - Ease of paralleling Available - Simple drive requirements - Material categorization: for definitions of pliance please see .vishay./doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of greater than 1.25 W is possible in a typical surface mount application. ORDERING INFORMATION Package Lead (Pb)-free and halogen-free Lead (Pb)-free Notes a. See device orientation b. “-BE3” denotes alternate manufacturing location SOT-223 Si HFL110TR-GE3 a Si HFL110TR-BE3 a, b IRFL110TRPBF-BE3 a, b IRFL110TRPb F...