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SiHFL214 - Power MOSFET

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General Description

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniques.

Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking.

Overview

www.vishay.com IRFL214, SiHFL214 Vishay Siliconix Power MOSFET D SOT-223 D G S D G Marking code: FD S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 250 VGS = 10 V 2.0 8.2 1.8 4.5 Single ORDERING INFORMATION Package Lead (Pb)-free and halogen-free Lead (Pb)-free Notes a.

See device orientation b.

Key Features

  • Surface-mount.
  • Available in tape and reel.
  • Dynamic dV/dt rating.
  • Repetitive avalanche rated.
  • Fast switching.
  • Ease of paralleling Available.
  • Simple drive requirements.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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