SiHFL9110 Datasheet | Vishay

.vishay. IRFL9110, Si HFL9110 Vishay Siliconix Power MOSFET SOT-223 D P-Channel MOSFET Marking code: FF PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (n C) Qgs (n C) Qgd (n C) Configuration -100 VGS = -10 V Single ORDERING INFORMATION Package Lead (Pb)-free and halogen-free Lead (Pb)-free Notes a. See device orientation b. “-BE3” denotes alternate manufacturing location Features - Surface-mount - Available in tape and reel - Dynamic dv/dt rating - Repetitive avalanche rated - P-channel - Fast switching Available - Ease of paralleling - Material categorization: for definitions of pliance please see .vishay./doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mount using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of greater than 1.25 W is possible in a typical surface mount...