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SiHFL9110 - Power MOSFET

Description

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The SOT-223 package is designed for surface-mount using vapor phase, infrared, or wave soldering techniques.

Features

  • Surface-mount.
  • Available in tape and reel.
  • Dynamic dv/dt rating.
  • Repetitive avalanche rated.
  • P-channel.
  • Fast switching Available.
  • Ease of paralleling.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Full PDF Text Transcription

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www.vishay.com IRFL9110, SiHFL9110 Vishay Siliconix Power MOSFET S SOT-223 G D S D G D P-Channel MOSFET Marking code: FF PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration -100 VGS = -10 V 1.2 8.7 2.2 4.1 Single ORDERING INFORMATION Package Lead (Pb)-free and halogen-free Lead (Pb)-free Notes a. See device orientation b. “-BE3” denotes alternate manufacturing location FEATURES • Surface-mount • Available in tape and reel • Dynamic dv/dt rating • Repetitive avalanche rated • P-channel • Fast switching Available • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.
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