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SiHFL9110 - Power MOSFET

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General Description

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The SOT-223 package is designed for surface-mount using vapor phase, infrared, or wave soldering techniques.

Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking.

Overview

www.vishay.com IRFL9110, SiHFL9110 Vishay Siliconix Power MOSFET S SOT-223 G D S D G D P-Channel MOSFET Marking code: FF PRODUCT SUMMARY VDS (V) RDS(on) () Qg max.

(nC) Qgs (nC) Qgd (nC) Configuration -100 VGS = -10 V 1.2 8.7 2.2 4.1 Single ORDERING INFORMATION Package Lead (Pb)-free and halogen-free Lead (Pb)-free Notes a.

See device orientation b.

Key Features

  • Surface-mount.
  • Available in tape and reel.
  • Dynamic dv/dt rating.
  • Repetitive avalanche rated.
  • P-channel.
  • Fast switching Available.
  • Ease of paralleling.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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