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SIHFZ10 - Power MOSFET

General Description

Third Generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

Key Features

  • Dynamic dV/dt Rating.
  • 175 °C Operating Temperature.
  • Fast Switching.
  • Ease of Paralleling.
  • Simple Drive Requirements.
  • Compliant to RoHS Directive 2002/95/EC Available RoHS.

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Datasheet Details

Part number SIHFZ10
Manufacturer Vishay
File Size 704.50 KB
Description Power MOSFET
Datasheet download datasheet SIHFZ10 Datasheet

Full PDF Text Transcription for SIHFZ10 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SIHFZ10. For precise diagrams, and layout, please refer to the original PDF.

Power MOSFET IRFZ10, SiHFZ10 Vishay Siliconix PRODUCT SUMMARY VDS (V) 60 RDS(on) () VGS = 10 V Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 11 3.1 5.8 Single 0.20 TO-2...

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Max.) (nC) Qgs (nC) Qgd (nC) Configuration 11 3.1 5.8 Single 0.20 TO-220AB D S D G G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Dynamic dV/dt Rating • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third Generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications a

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