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SIHFZ10 - Power MOSFET

Description

Third Generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

Features

  • Dynamic dV/dt Rating.
  • 175 °C Operating Temperature.
  • Fast Switching.
  • Ease of Paralleling.
  • Simple Drive Requirements.
  • Compliant to RoHS Directive 2002/95/EC Available RoHS.

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Datasheet Details

Part number SIHFZ10
Manufacturer Vishay Siliconix
File Size 704.50 KB
Description Power MOSFET
Datasheet download datasheet SIHFZ10 Datasheet
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Power MOSFET IRFZ10, SiHFZ10 Vishay Siliconix PRODUCT SUMMARY VDS (V) 60 RDS(on) () VGS = 10 V Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 11 3.1 5.8 Single 0.20 TO-220AB D S D G G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Dynamic dV/dt Rating • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third Generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
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