SIHFZ34L Datasheet | Vishay

FEATURES - Advanced process technology - Surface mount - Low-profile through-hole (IRFZ34L, Si HFZ34L) - 175 °C operating temperature Available - Fast switching - Material categorization: for definitions of pliance please see .vishay./doc?99912 Available Note - This datasheet provides information about parts that are Ro HS-pliant and / or parts that are non-Ro HS-pliant. For example, parts with lead (Pb) terminations are not Ro HS-pliant. Please see the information / tables in this datasheet for details. S N-Channel MOSFET DESCRIPTION Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2PAK is a surface mount power package capable of acmodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2 W in a typical surface mount application. The through-hole version (IRFZ34L, Si HFZ34L) is available for low-profile applications. ORDERING INFORMATION Package Lead (Pb)-free and halogen-free Lead (Pb)-free Note a. See device orientation. D2PAK (TO-263) Si HFZ34S-GE3 IRFZ34SPb F D2PAK (TO-263) Si HFZ34STRL-GE3 IRFZ34STRLPb F a I2PAK (TO-262) Si HFZ34L-GE3 IRFZ34LPb F ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current a, e VGS at 10 V TC = 25 °C TC = 100 °C Linear Derating Factor Single Pulse Avalanche Energy b, e Maximum Power Dissipation Peak Diode Recovery d V/dt c, e TC = 25 °C TA = 25...