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SIHFZ34 - Power MOSFET

General Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Key Features

  • Dynamic dV/dt Rating.
  • 175 °C Operating Temperature.
  • Fast Switching.
  • Ease of Paralleling.
  • Simple Drive Requirements.
  • Compliant to RoHS Directive 2002/95/EC Available RoHS.

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Datasheet Details

Part number SIHFZ34
Manufacturer Vishay
File Size 1.18 MB
Description Power MOSFET
Datasheet download datasheet SIHFZ34 Datasheet

Full PDF Text Transcription for SIHFZ34 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SIHFZ34. For precise diagrams, and layout, please refer to the original PDF.

Power MOSFET IRFZ34, SiHFZ34 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 10 V 46 11 22 Single 0.050 D TO-...

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(nC) Qgd (nC) Configuration 60 VGS = 10 V 46 11 22 Single 0.050 D TO-220AB G S D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Dynamic dV/dt Rating • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at