SS10P3
SS10P3 is High Current Density Surface Mount Schottky Barrier Rectifiers manufactured by Vishay.
.Data Sheet.co.kr
New Product
SS10P3, SS10P4
Vishay General Semiconductor
High Current Density Surface Mount Schottky Barrier Rectifiers e SMP ® Series
Features
- Very low profile
- typical height of 1.1 mm
- Ideal for automated placement
- Guardring for overvoltage protection
- Low forward voltage drop, low power losses
1 2
- High efficiency
- Low thermal resistance
- Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
- AEC-Q101 qualified
- pliant to Ro HS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
TO-277A (SMPC)
K Cathode Anode 1 Anode 2
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM EAS VF at IF = 10 A TJ max. 10 A 30 V, 40 V 280 A 20 m J 0.41 V 150 °C
MECHANICAL DATA
Case: TO-277A (SMPC) Molding pound meets UL 94 V-0 flammability rating Base P/N-M3
- halogen-free, Ro HS pliant, and mercial grade Base P/NHM3
- halogen-free, Ro HS pliant, and automotive grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters, freewheeling, DC/DC converters and polarity protection applications.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER Device marking code Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) Peak forward surge current 10 ms single half sine-wave superimposed on rated load Non-repetitive avalanche energy at IAS = 2.0 A, TJ = 25 °C Operating junction and storage temperature range VRRM IF(AV) IFSM EAS TJ, TSTG SYMBOL SS10P3 S103 30 10 280...
