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SS10P4 - (SS10P3 / SS10P4) High Current Density Surface Mount Schottky Barrier Rectifiers

This page provides the datasheet information for the SS10P4, a member of the SS10P3 (SS10P3 / SS10P4) High Current Density Surface Mount Schottky Barrier Rectifiers family.

Features

  • Very low profile - typical height of 1.1 mm.
  • Ideal for automated placement.
  • Guardring for overvoltage protection.
  • Low forward voltage drop, low power losses 1 2.
  • High efficiency.
  • Low thermal resistance.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • AEC-Q101 qualified.
  • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC.
  • Halogen-free according to IEC 61249-2-21 defini.

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Datasheet preview – SS10P4

Datasheet Details

Part number SS10P4
Manufacturer Vishay Siliconix
File Size 154.87 KB
Description (SS10P3 / SS10P4) High Current Density Surface Mount Schottky Barrier Rectifiers
Datasheet download datasheet SS10P4 Datasheet
Additional preview pages of the SS10P4 datasheet.

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Other Datasheets by Vishay Siliconix
  • SS10P4C - (SS10P3C / SS10P4C) High Current Density Surface Mount Schottky Barrier Rectifiers
  • SS10P2CL - (SS10P2CL / SS10P3CL) High Current Density Surface Mount Dual Common-Cathode Schottky Rectifiers
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Full PDF Text Transcription

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www.DataSheet.co.kr New Product SS10P3, SS10P4 Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers eSMP ® Series K FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Guardring for overvoltage protection • Low forward voltage drop, low power losses 1 2 • High efficiency • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition TO-277A (SMPC) K Cathode Anode 1 Anode 2 PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM EAS VF at IF = 10 A TJ max. 10 A 30 V, 40 V 280 A 20 mJ 0.
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