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SS10P3C - (SS10P3C / SS10P4C) High Current Density Surface Mount Schottky Barrier Rectifiers

Features

  • Very low profile - typical height of 1.1 mm.
  • Ideal for automated placement.
  • Low forward voltage drop, low power losses.
  • High efficiency.
  • Low thermal resistance.
  • Meets MSL level 1, per J-STD-020.
  • AEC-Q101 qualified.
  • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC.
  • Halogen-free according to IEC 61249-2-21 definition 1 2 TO-277A (SMPC) K Cathode Anode 1 Anode 2.

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Datasheet Details

Part number SS10P3C
Manufacturer Vishay Siliconix
File Size 156.12 KB
Description (SS10P3C / SS10P4C) High Current Density Surface Mount Schottky Barrier Rectifiers
Datasheet download datasheet SS10P3C Datasheet
Additional preview pages of the SS10P3C datasheet.

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Other Datasheets by Vishay Siliconix
  • SS10P3CL - (SS10P2CL / SS10P3CL) High Current Density Surface Mount Dual Common-Cathode Schottky Rectifiers
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Full PDF Text Transcription

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www.DataSheet.co.kr New Product SS10P3C, SS10P4C Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers eSMP TM Series K FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • Low thermal resistance • Meets MSL level 1, per J-STD-020 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition 1 2 TO-277A (SMPC) K Cathode Anode 1 Anode 2 MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM EAS VF at IF = 5 A TJ max. 2 x 5.0 A 30 V, 40 V 200 A 20 mJ 0.
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