SS10PH45
SS10PH45 is High Current Density Surface Mount Schottky Rectifier manufactured by Vishay.
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New Product
Vishay General Semiconductor
High Current Density Surface Mount Schottky Rectifier e SMP ® Series
Features
- Very low profile
- typical height of 1.1 mm
- Ideal for automated placement
- Guardring for overvoltage protection
- High barrier technology, TJ = 175 °C maximum
1 2
- Low leakage current
- Meets MSL level 1, per LF maximum peak of 260 °C
- AEC-Q101 qualified
- pliant to Ro HS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition J-STD-020,
TO-277A (SMPC)
K Cathode Anode 1 Anode 2
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM EAS VF at IF = 10 A IR TJ max. 10 A 45 V 200 A 20 m J 0.56 V 5.5 μA 175 °C
MECHANICAL DATA
Case: TO-277A (SMPC) Molding pound meets UL 94 V-0 flammability rating Base P/N-M3
- halogen-free, Ro HS pliant, and mercial grade Base P/NHM3
- halogen-free, Ro HS pliant, and automotive grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters or polarity protection application.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER Device marking code Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) Peak forward surge current 10 ms single half sine-wave superimposed on rated load Non-repetitive avalanche energy at IAS = 2 A , TJ = 25 °C Operating junction and storage temperature range VRRM IF(AV) IFSM EAS TJ, TSTG SYMBOL SS10PH45 10H45 45 10 200 20
- 55 to + 175 V A A m J °C UNIT
Document Number: 89057 Revision:...
