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SS10PH45 - High Current Density Surface Mount Schottky Rectifier

Features

  • Very low profile - typical height of 1.1 mm.
  • Ideal for automated placement.
  • Guardring for overvoltage protection.
  • High barrier technology, TJ = 175 °C maximum 1 2.
  • Low leakage current.
  • Meets MSL level 1, per LF maximum peak of 260 °C.
  • AEC-Q101 qualified.
  • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC.
  • Halogen-free according to IEC 61249-2-21 definition J-STD-020, TO-277A (SMPC) K Cath.

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Datasheet Details

Part number SS10PH45
Manufacturer Vishay Siliconix
File Size 155.48 KB
Description High Current Density Surface Mount Schottky Rectifier
Datasheet download datasheet SS10PH45 Datasheet
Additional preview pages of the SS10PH45 datasheet.

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Other Datasheets by Vishay Siliconix
  • SS10PH10 - (SS10PH9 / SS10PH10) High Current Density Surface Mount High-Voltage Schottky Rectifier
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  • SS10P4 - (SS10P3 / SS10P4) High Current Density Surface Mount Schottky Barrier Rectifiers
  • SS10P4C - (SS10P3C / SS10P4C) High Current Density Surface Mount Schottky Barrier Rectifiers

Full PDF Text Transcription

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www.DataSheet.co.kr New Product SS10PH45 Vishay General Semiconductor High Current Density Surface Mount Schottky Rectifier eSMP ® Series K FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Guardring for overvoltage protection • High barrier technology, TJ = 175 °C maximum 1 2 • Low leakage current • Meets MSL level 1, per LF maximum peak of 260 °C • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition J-STD-020, TO-277A (SMPC) K Cathode Anode 1 Anode 2 PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM EAS VF at IF = 10 A IR TJ max. 10 A 45 V 200 A 20 mJ 0.56 V 5.
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