SS10PH9 - (SS10PH9 / SS10PH10) High Current Density Surface Mount High-Voltage Schottky Rectifier

This page provides the datasheet information for the SS10PH9, a member of the SS10PH10 (SS10PH9 / SS10PH10) High Current Density Surface Mount High-Voltage Schottky Rectifier family.

Description

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Features

Very low profile - typical height of 1.1 mm K.
Ideal for automated placement.
Guardring for overvoltage protection 1 2 TO-277A (SMPC) K Cathode Anode 1 Anode 2.
High Barrier Technology, Tj = 175 °C Maximum.
Low leakage current.
Meets MSL level 1, per J-STD-020C.
Solder Dip 260 °C, 40 seconds.
Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC.

Vishay Siliconix

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Datasheet Details

Part number	SS10PH9
Manufacturer	Vishay Siliconix
File Size	116.31 KB
Description	(SS10PH9 / SS10PH10) High Current Density Surface Mount High-Voltage Schottky Rectifier
Datasheet	SS10PH9 Datasheet
Additional preview pages of the SS10PH9 datasheet.

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Other Datasheets by Vishay Siliconix

SS10PH10 - (SS10PH9 / SS10PH10) High Current Density Surface Mount High-Voltage Schottky Rectifier
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Full PDF Text Transcription

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www.DataSheet4U.com SS10PH9 & SS10PH10 Preliminary Vishay General Semiconductor High Current Density Surface Mount High-Voltage Schottky Rectifier FEATURES • Very low profile - typical height of 1.1 mm K • Ideal for automated placement • Guardring for overvoltage protection 1 2 TO-277A (SMPC) K Cathode Anode 1 Anode 2 • High Barrier Technology, Tj = 175 °C Maximum • Low leakage current • Meets MSL level 1, per J-STD-020C • Solder Dip 260 °C, 40 seconds • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, free-wheeling diodes, dc-to-dc converters or polarity protection application.

Published: Feb 1, 2007 |