SS10PH9 Datasheet | Vishay

.. SS10PH9 & SS10PH10 Preliminary Vishay General Semiconductor High Current Density Surface Mount High-Voltage Schottky Rectifier Features - Very low profile - typical height of 1.1 mm - Ideal for automated placement - Guardring for overvoltage protection 1 2 TO-277A (SMPC) K Cathode Anode 1 Anode 2 - High Barrier Technology, Tj = 175 °C Maximum - Low leakage current - Meets MSL level 1, per J-STD-020C - Solder Dip 260 °C, 40 seconds - ponent in accordance to Ro HS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, free-wheeling diodes, dc-to-dc converters or polarity protection application. MECHANICAL DATA Case: TO-277A (SMPC) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002B and JESD22-B102D E3 suffix for mercial grade Polarity: As marked MAJOR RATINGS AND CHARACTERISTICS IF(AV) VRRM IFSM EAS VF at IF = 10 A IR Tj max. 10 A 90 V, 100 V 200 A 20 m J 0.661 V 0.3 µA 175 °C MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Device marking code Maximum repetitive peak reverse voltage Maximum average forward rectified current (see Fig. 1) Peak forward surge current 10 ms single half sine-wave superimposed on rated load Non-repetitive avalanche energy at IAS = 2 A, L = 10 m H, Tj = 25 °C Voltage rate of change (rated VR) Operating junction and storage temperature range VRRM IF(AV) IFSM EAS dv/dt TJ, TSTG SYMBOL SS10PH9 10H9 90 10 200 20 10000 - 55 to + 175 SS10PH10 10H10 100 V A A m J V/µs °C UNIT Document Number 89000 24-Jul-06 .vishay. 1 SS10PH9 & SS10PH10 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS at IF = 5 A at IF = 10 A at IF = 5 A at IF = 10 A Reverse current (1) Typical junction capacitance Note: (1) Pulse test: 300 µs pulse width, 1 % duty cycle at rated VR at 4.0 V, 1 MHz Tj = 25 °C VF Tj = 125 °C Tj = 25 °C Tj = 125...