SS10P5 - Schottky Barrier Rectifier

Features

Very low profile - typical height of 1.1 mm Available.
Ideal for automated placement.
Guardring for overvoltage protection.
Low forward voltage drop, low power losses.
High efficiency.
Low thermal resistance.
Meet MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
AEC-Q101 qualified available - Automotive ordering code: base P/NHM3.
Material categorization: for definitions of compliance please see www.

Vishay Siliconix

Datasheet Details

Part number	SS10P5
Manufacturer	Vishay Siliconix
File Size	94.41 KB
Description	Schottky Barrier Rectifier
Datasheet	SS10P5 Datasheet
Additional preview pages of the SS10P5 datasheet.

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Other Datasheets by Vishay Siliconix

SS10P2CL - (SS10P2CL / SS10P3CL) High Current Density Surface Mount Dual Common-Cathode Schottky Rectifiers
SS10P3 - (SS10P3 / SS10P4) High Current Density Surface Mount Schottky Barrier Rectifiers
SS10P3C - (SS10P3C / SS10P4C) High Current Density Surface Mount Schottky Barrier Rectifiers
SS10P3CL - (SS10P2CL / SS10P3CL) High Current Density Surface Mount Dual Common-Cathode Schottky Rectifiers
SS10P4 - (SS10P3 / SS10P4) High Current Density Surface Mount Schottky Barrier Rectifiers
SS10P4C - (SS10P3C / SS10P4C) High Current Density Surface Mount Schottky Barrier Rectifiers
SS10P6 - Schottky Barrier Rectifier
SS10PH10 - (SS10PH9 / SS10PH10) High Current Density Surface Mount High-Voltage Schottky Rectifier

Full PDF Text Transcription

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www.vishay.com SS10P5, SS10P6 Vishay General Semiconductor High Current Density Surface-Mount Schottky Barrier Rectifier eSMP® Series K 1 2 SMPC (TO-277A) K Cathode Anode 1 Anode 2 LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM EAS VF at IF = 10 A TJ max. Package 10 A 50 V, 60 V 280 A 20 mJ 0.55 V 150 °C SMPC (TO-277A) Circuit configuration Single FEATURES • Very low profile - typical height of 1.

Published: Jan 28, 2012 |