SS12P2L - (SS12P2L / SS12P3L) High Current Density Surface Mount Schottky Barrier Rectifiers

Features

Very low profile - typical height of 1.1 mm.
Ideal for automated placement.
Guardring for overvoltage protection.
Low forward volatge drop, low power losses 1 2.
High efficiency.
Low thermal resistance.
Meets MSL level 1, per LF maximum peak of 260 °C.
AEC-Q101 qualified.
Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC.
Halogen-free according to IEC 61249-2-21 definition J-STD-.

Vishay Siliconix

Datasheet Details

Part number	SS12P2L
Manufacturer	Vishay Siliconix
File Size	154.79 KB
Description	(SS12P2L / SS12P3L) High Current Density Surface Mount Schottky Barrier Rectifiers
Datasheet	SS12P2L Datasheet
Additional preview pages of the SS12P2L datasheet.

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Other Datasheets by Vishay Siliconix

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Full PDF Text Transcription

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www.DataSheet.co.kr New Product SS12P2L, SS12P3L Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers eSMP ® Series K FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Guardring for overvoltage protection • Low forward volatge drop, low power losses 1 2 • High efficiency • Low thermal resistance • Meets MSL level 1, per LF maximum peak of 260 °C • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition J-STD-020, TO-277A (SMPC) K Cathode Anode 1 Anode 2 PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM EAS VF at IF = 12 A TJ max. 12 A 20 V, 30 V 280 A 20 mJ 0.

Published: Jan 28, 2012 |