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SUM23N15-73 - N-Channel MOSFET

Key Features

  • TrenchFET® Power.

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SUM23N15-73 Vishay Siliconix N-Channel 150 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 0.073 at VGS = 10 V 150 0.077 at VGS = 6 V TO-263 ID (A) 23 22.5 FEATURES • TrenchFET® Power MOSFETS • 175 °C Junction Temperature • Low Thermal Resistance Package • PWM Optimized • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch D GDS Top View Ordering Information: SUM23N15-73-E3 (Lead (Pb) free) G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Avalanche Current IAR Repetitive Avalanche Energya L = 0.