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SUP57N20-33 - N-Channel MOSFET

Key Features

  • TrenchFET® Power MOSFET.
  • 175 °C Junction Temperature.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SUP57N20-33 Vishay Siliconix N-Channel 200-V (D-S) 175 °C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 200 0.033 at VGS = 10 V ID (A) 57 TO-220AB FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature APPLICATIONS • Isolated DC/DC converters - Primary-Side Switch D Available RoHS* COMPLIANT DRAIN connected to TAB GD S Top View Ordering Information: SUP57N20-33 SUP57N20-33-E3 (Lead (Pb)-free) G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Avalanche Current IAS Single Pulse Avalanche Energya L = 0.