SiHFBF20L
SiHFBF20L is Power MOSFET manufactured by Vishay.
FEATURES
- Halogen-free According to IEC 61249-2-21
Definition
- Surface Mount (IRFBF20S, Si HFBF20S)
- Low-Profile Through-Hole (IRFBF20L, Si HFBF20L)
- Available in Tape and Reel (IRFBF20S, Si HFBF20S)
- Dynamic d V/dt Rating
- 150 °C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- pliant to Ro HS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs form Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capabel of the acmodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRFBF20L, Si HFBF20L) is available for low-profile applications.
ORDERING INFORMATION
Package
D2PAK (TO-263)
Lead (Pb)-free and Halogen-free Si HFBF20S-GE3
Lead (Pb)-free Note
IRFBF20SPb F Si HFBF20S-E3 a. See device orientation.
D2PAK (TO-263) Si HFBF20STRL-GE3a IRFBF20STRLPb Fa Si HFBF20STL-E3a
D2PAK (TO-263) Si HFBF20STRR-GE3a IRFBF20STRRPb Fa Si HFBF20STR-E3a
I2PAK (TO-262) Si HFBF20L-GE3 IRFBF20LPb F Si HFBF20L-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltagee Gate-Source Voltagee
Continuous Drain Current
Pulsed Drain Currenta,e Linear Derating Factor
VGS at 10 V
TC = 25 °C TC = 100 °C
VDS VGS
Single Pulse Avalanche Energyb, e Repetitive Avalanche Currenta Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery d V/dtc, e
TC = 25 °C TA = 25 °C
EAS IAR EAR
PD d V/dt
Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) for 10...