SiHFD420 Datasheet | Vishay

FEATURES - Dynamic d V/dt Rating 500 3.0 - Repetitive Avalanche Rated - For Automatic Insertion - End Stackable - Fast Switching - Ease of Paralleling - Simple Drive Requirements - Lead (Pb)-free Available Available Ro HS- PLIANT HEXDIP DESCRIPTION G S N-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple binations on standard 0.1 inch pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W. ORDERING INFORMATION Package Lead (Pb)-free Sn Pb HEXDIP IRFD420Pb F Si HFD420-E3 IRFD420 Si HFD420 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery d V/dtc for 10 s Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. VDD = 50 V, starting TJ = 25 °C, L = 40 m H, RG = 25 Ω, IAS = 1.5 A. c. ISD ≤ 4.4 A, d I/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. - Pb containing terminations are not Ro HS pliant, exemptions may apply Document Number: 91135 S-Pending-Rev. A, 23-Jun-08 TC = 25 °C EAS IAR EAR PD d V/dt TJ, Tstg VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM LIMIT 500 ± 20 0.37 0.23 3.0 0.0083 51 0.37 0.10 1.0 3.5 - 55 to + 150 300d W/°C m J A m J W V/ns °C A UNIT V WORK-IN-PROGRESS .vishay. 1 IRFD420, Si HFD420 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient SYMBOL Rth JA TYP. MAX. 120 UNIT °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise...