SiHFDC20 Datasheet | Vishay

FEATURES - Dynamic d V/dt Rating 600 4.4 - Repetitive Avalanche Rated - For Automatic Insertion - End Stackable - Fast Switching - Ease of Paralleling - Simple Drive Requirements - Lead (Pb)-free Available Available Ro HS- PLIANT HEXDIP DESCRIPTION G S N-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple binations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W. ORDERING INFORMATION Package Lead (Pb)-free Sn Pb HEXDIP IRFDC20Pb F Si HFDC20-E3 IRFDC20 Si HFDC20 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta TC = 25 °C Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery d V/dtc Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) for 10 s Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 54 m H, RG = 25 Ω, IAS = 1.3 A (see fig. 12). c. ISD ≤ 4.4 A, d I/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. - Pb containing terminations are not Ro HS pliant, exemptions may apply Document Number: 91142 S-Pending-Rev. A, 13-Jun-08 EAS IAR EAR PD d V/dt TJ, Tstg VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM LIMIT 600 ± 20 0.32 0.20 2.6 0.0083 50 0.32 0.10 1.0 3.0 - 55 to + 150 300d W/°C m J A m J W V/ns °C A UNIT V WORK-IN-PROGRESS .vishay. 1 IRFDC20, Si HFDC20 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient SYMBOL Rth JA TYP. MAX. 120 UNIT °C/W SPECIFICATIONS TJ = 25...