Datasheet4U Logo Datasheet4U.com

SiHFI9Z14G - Power MOSFET

Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications.

Features

  • - 60 0.50.
  • Isolated Package.
  • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz).
  • Sink to Lead Creepage Distance = 4.8 mm.
  • P-Channel.
  • 175 °C Operating Temperature.
  • Dynamic dV/dt Rating.
  • Low Thermal Resistance.
  • Lead (Pb)-free Available Available RoHS.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SIHFI530G Power MOSFET Vishay
SiHFIB5N65A Power MOSFET Vishay
SiHFIB6N60A Power MOSFET Vishay
SiHFIBC40GLC Power MOSFET Vishay
SiHFIBC40GLC N-Channel 650V Power MOSFET VBsemi

Other Datasheets by Vishay

Part Number Description
SiHFI9Z24G Power MOSFET
SiHFI9Z34G Power MOSFET
SiHFI9520G Power MOSFET
SiHFI9530G Power MOSFET
SiHFI9540G Power MOSFET

Full PDF Text Transcription

Click to expand full text
IRFI9Z14G, SiHFI9Z14G Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration www.DataSheet4U.com VGS = - 10 V 12 3.8 5.1 Single S FEATURES - 60 0.50 • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature • Dynamic dV/dt Rating • Low Thermal Resistance • Lead (Pb)-free Available Available RoHS* COMPLIANT TO-220 FULLPAK G DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications.
Published: |