SiHFI9Z34G Description
Third generation power MOSFETs from Vishay provide the desig.
SiHFI9Z34G Key Features
- Isolated package
- High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
- Sink to lead creepage distance = 4.8 mm
- P-channel
- 175 °C operating temperature
- Dynamic dV/dt rating
- Low thermal resistance
- Material categorization: for definitions of pliance please see .vishay./doc?99912
- This datasheet provides information about parts that are