SiHFI9Z34G
SiHFI9Z34G is Power MOSFET manufactured by Vishay.
FEATURES
- Isolated package
- High voltage isolation = 2.5 k VRMS (t = 60 s; f = 60 Hz)
Available
- Sink to lead creepage distance = 4.8 mm
- P-channel
Available
- 175 °C operating temperature
- Dynamic d V/dt rating
- Low thermal resistance
- Material categorization: for definitions of pliance please see .vishay./doc?99912
Note
- This datasheet provides information about parts that are
Ro HS-pliant and / or parts that are non-Ro HS-pliant. For example, parts with lead (Pb) terminations are not Ro HS-pliant.
Please see the information / tables in this datasheet for details.
DESCRIPTION
Third generation power MOSFETs from Vishay provide the...
