SiHFIBF20G Datasheet | Vishay

FEATURES - Isolated Package 900 8.0 - High Voltage Isolation = 2.5 k VRMS (t = 60 s; f = 60 Hz) - Dynamic d V/dt Rating - Low Thermal Resistance - Lead (Pb)-free Available Available Ro HS- PLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in mercial-industrial applications. The molding pound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing. TO-220 FULLPAK N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free Sn Pb TO-220 FULLPAK IRFIBF20GPb F Si HFIBF20G-E3 IRFIBF20G Si HFIBF20G ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery d V/dtc Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) Mounting Torque VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM EAS IAR EAR PD d V/dt TJ, Tstg LIMIT 900 ± 20 1.2 0.79 4.8 0.24 150 1.2 3.0 30 1.5 - 55 to + 150 300d 10 1.1 UNIT V A W/°C m J A m J W V/ns °C lbf - in N- m TC = 25 °C for 10 s 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 196 m H, RG = 25 Ω, IAS = 1.2 A (see fig. 12). c. ISD ≤ 1.7 A, d I/dt ≤ 70 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. - Pb containing terminations are not Ro HS pliant, exemptions may apply Document Number: 91185...