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Dual N-Channel 30 V (D-S) MOSFET
Si1028X
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) () Max.
0.650 at VGS = 10 V 30
0.770 at VGS = 4.5 V
ID (A) 0.48 0.45
Qg (Typ.) 0.5
S1 1 G1 2 D2 3
SC-89 6 D1 5 G2 4 S2
FEATURES • TrenchFET® Power MOSFET • ESD Protected: 550 V Typical HBM • Material categorization:
For definitions of compliance please see www.vishay.
SI1028X Datasheet
