SI1308EDL Datasheet | Vishay

FEATURES - Trench FET® power MOSFET - 100 % Rg tested - Typical ESD performance 1800 V - Material categorization: for definitions of pliance please see .vishay./doc?99912 APPLICATIONS - Smart phones, tablet PC’s - DC/DC converters - Boost converters - Load switch, OVP switch S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 μs) Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VDS VGS IDM IS TJ, Tstg LIMIT 30 ± 12 1.4 1.1 1.5 a, b 1.2 a, b 6 0.4 0.3 0.5 0.3 0.4 a, b 0.3 a, b -55 to +150 260 UNIT V W °C THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient a, d Maximum Junction-to-Foot (Drain) t ≤ 10 s Steady State Notes a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Based on TC = 25 °C. d. Maximum under steady state conditions is 360 °C/W. SYMBOL Rth JA Rth JF TYP. 250 225 MAX. 300...