SIE878DF Description
New Product N-Channel 25-V (D-S) MOSFET SiE878DF Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0052 at VGS = 10 V 25 0.0068 at VGS = 4.5 V ID (A)a 45 45 Qg (Typ.) 11.2 nC Package Drawing .vishay./doc?68797 PolarPAK 10 9 8 7 6 D GS S D 67 8 9 10 D D.
SIE878DF Key Features
- Halogen-free According to IEC 61249-2-21 Definition
- TrenchFET® Gen III Power MOSFET
- Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling
- Leadframe-Based New Encapsulated Package
- Die Not Exposed
- Same Layout Regardless of Die Size
- Low Qgd/Qgs Ratio Helps Prevent Shoot-Through
- 100 % Rg and UIS Tested
- pliant to RoHS directive 2002/95/EC