SIE882DF Description
New Product N-Channel 25-V (D-S) MOSFET SiE882DF Vishay Siliconix PRODUCT SUMMARY ID (A)a VDS (V) RDS(on) (Ω) Silicon Package Limit Limit Qg (Typ.) 0.0014 at VGS = 10 V 229 25 0.0018 at VGS = 4.5 V 202 60 46 nC 60 Package Drawing .vishay./doc?72945 PolarPAK.
SIE882DF Key Features
- Halogen-free According to IEC 61249-2-21 Definition
- TrenchFET® Gen III Power MOSFET
- Ultra Low Thermal Resistance Using Top-Exposed PolarPAK® Package for Double-Sided Cooling
- Leadframe-Based New Encapsulated Package
- Die Not Exposed
- Same Layout Regardless of Die Size, ≤ 100 V
- Low Qgd/Qgs Ratio Helps Prevent Shoot-Through
- 100 % Rg and UIS Tested
- pliant to RoHS Directive 2002/95/EC