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SiS430DN
Vishay Siliconix
N-Channel 25-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 25 RDS(on) (Ω) 0.0051 at VGS = 10 V 0.0069 at VGS = 4.5 V ID (A)a 35 13 nC 35 Qg (Typ.)
FEATURES
• Halogen-free • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested
PowerPAK® 1212-8
APPLICATIONS
• DC/DC Converter - POL - Server
3.30 mm
S 1 2 3 S S
3.30 mm
D
G 4
D 8 7 6 5 D D D
G
Bottom View Ordering Information: SiS430DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Avalanche Current Avalanche Energy TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C L = 0.