SIS434DN
FEATURES
- Halogen-free According to IEC 61249-2-21 Definition
- Trench FET® Power MOSFET
- 100 % Rg Tested
- 100 % UIS Tested
- pliant to Ro HS Directive 2002/95/EC
Power PAK® 1212-8
APPLICATIONS
3.30 mm
S 1 2 3 4 D 8 7 6 5 D D D S S G
3.30 mm
- POL
Bottom View Ordering Information: Si S434DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Avalanche Current Avalanche Energy TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C L = 0.1 m H Symbol VDS VGS ID IDM IAS EAS IS Limit 40 ± 20 35a 35a 17.6b, c 14.1b, c 60 30 45 35a 3.2b, c 52 33 3.8b, c 2b, c
- 55 to 150 260 Unit V
A m J A
TC = 25 °C Continuous Source-Drain Diode Current TA = 25 °C TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature)d,...
