Datasheet4U Logo Datasheet4U.com

SiS439DNT - P-Channel 30V MOSFET

Features

  • TrenchFET® power MOSFET.
  • Low thermal resistance PowerPAK® package with small size and low 0.75 mm profile.
  • 100 % Rg and UIS tested.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

📥 Download Datasheet

Datasheet preview – SiS439DNT

Datasheet Details

Part number SiS439DNT
Manufacturer Vishay
File Size 174.56 KB
Description P-Channel 30V MOSFET
Datasheet download datasheet SiS439DNT Datasheet
Additional preview pages of the SiS439DNT datasheet.

📁 Similar Datasheet

  • SIS43 - SMT Power Induvtor (DELTA ELECTRONICS)
  • SIS0100 - Black and White Image Sensor Camera Module (Sanyo Semicon Device)
  • SiS1057 - JFET Operational Amplifier (Silicon Supplies)
  • SIS23C128 - 16K x 8 CMOS Mask ROM (Silicon Integrated Systems)
  • SIS23C128A - 16K x 8 CMOS Mask ROM (Silicon Integrated Systems)
  • SIS23C256 - CMOS MASK ROM (ETC)
  • SIS23C256A - CMOS MASK ROM (ETC)
  • SIS23C32 - (SIS23C32 / SIS23C33) 4K x 8 CMOS MASK ROM (Silicon Integrated Systems)
  • SIS23C32A - (SIS23C32 / SIS23C33) 4K x 8 CMOS MASK ROM (Silicon Integrated Systems)
  • SIS23C33 - (SIS23C32 / SIS23C33) 4K x 8 CMOS MASK ROM (Silicon Integrated Systems)
Other Datasheets by Vishay

Full PDF Text Transcription

Click to expand full text
www.vishay.com SiS439DNT Vishay Siliconix P-Channel 30 V (D-S) MOSFET PowerPAK® 1212-8S D D D 6 D 7 8 5 3.3 mm 1 Top View 3.3 mm PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = -10 V RDS(on) max. () at VGS = -4.5 V Qg typ. (nC) ID (A) Configuration 1 4 3 S 2 S S G Bottom View -30 0.0110 0.0195 23 -50 e, f Single FEATURES • TrenchFET® power MOSFET • Low thermal resistance PowerPAK® package with small size and low 0.75 mm profile • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.
Published: |