SiS439DNT
FEATURES
- Trench FET® power MOSFET
- Low thermal resistance Power PAK® package with small size and low 0.75 mm profile
- 100 % Rg and UIS tested
- Material categorization: for definitions of pliance please see .vishay./doc?99912
APPLICATIONS
- Load switch
- Adaptor switch
- Notebook PC
P-Channel MOSFET D
ORDERING INFORMATION
Package Lead (Pb)-free and halogen-free
Power PAK 1212-8S Si S439DNT-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage Gate-source voltage
Continuous drain current (TJ = 150 °C)
Pulsed drain current (t = 100 μs) Continuous source-drain diode current Single pulse avalanche current Single pulse avalanche energy
Maximum power dissipation
Operating junction and storage temperature range Soldering remendations (peak temperature) c, d
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
TC = 25 °C TA = 25 °C
L = 0.1 m H
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
VDS VGS
IDM IS IAS EAS
TJ, Tstg
LIMIT -30...
