SiS439DNT Description
() at VGS = -10 V RDS(on) max. () at VGS = -4.5 V Qg typ. (nC) ID (A) Configuration 1 4 3 S 2 S S G Bottom View -30 0.0110 0.0195 23 -50 e, f Single.
SiS439DNT Key Features
- TrenchFET® power MOSFET
- Low thermal resistance PowerPAK® package
- 100 % Rg and UIS tested