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SIS436DN - N-Channel 25V MOSFET

Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • TrenchFET® Gen III Power MOSFET.
  • 100 % Rg Tested.
  • 100 % UIS Tested.

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Datasheet preview – SIS436DN

Datasheet Details

Part number SIS436DN
Manufacturer Vishay
File Size 1.03 MB
Description N-Channel 25V MOSFET
Datasheet download datasheet SIS436DN Datasheet
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Full PDF Text Transcription

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N-Channel 25-V (D-S) MOSFET SiS436DN Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0105 at VGS = 10 V 25 0.013 at VGS = 4.5 V ID (A)a, g 16 16 Qg (Typ.) 6.7 nC PowerPAK® 1212-8 3.30 mm D 8 D 7 D 6 D 5 S 1 S 3.30 mm 2 S 3 G 4 Bottom View Ordering Information: SiS436DN-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Gen III Power MOSFET • 100 % Rg Tested • 100 % UIS Tested APPLICATIONS • DC/DC Conversion D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 25 V VGS ± 20 TC = 25 °C 16a, g Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C 16g 13.
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