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SiS822DNT
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 30
RDS(on) (Ω) MAX. 0.024 at VGS = 10 V 0.030 at VGS = 4.5 V
ID (A) a 12 12
0.8 mm
Thin PowerPAK® 1212-8 Single
D
D
D 6
D 7
8
5
Qg (TYP.) 3.8 nC
3.3 mm
1 Top View
3.3 mm
1
3
2 S
S
4S
G
Bottom View
Ordering Information:
SiS822DNT-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES • TrenchFET® power MOSFET
• 100 % Rg and UIS tested • Thin 0.8 mm profile
• Material categorization: For definitions of compliance please see www.vishay.
SIS822DNT Datasheet
