SiS890ADN Description
() at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration 1 2S 3S 4S G Bottom View 100 0.0255 0.0290 8.8 24.7 Single.
SiS890ADN Key Features
- TrenchFET® Gen IV power MOSFET
- Very low RDS x Qg figure-of-merit (FOM)
- Tuned for the lowest RDS x Qoss FOM
- 100 % Rg and UIS tested