SIS892DN Description
N-Channel 100 V (D-S) MOSFET SiS892DN Vishay Siliconix PRODUCT SUMMARY VDS (V) 100 RDS(on) () 0.029 at VGS = 10 V 0.042 at VGS = 4.5 V PowerPAK 1212-8 ID (A)f 30g 25 Qg (Typ.) 6.7.
SIS892DN Key Features
- Halogen-free According to IEC 61249-2-21 Definition
- TrenchFET® Power MOSFET
- 100 % Rg Tested
- 100 % UIS Tested
- pliant to RoHS Directive 2002/95/EC