SIS892DN - N-Channel 100-V (D-S) MOSFET

Vishay

Key Features

Halogen-free According to IEC 61249-2-21 Definition.
TrenchFET® Power MOSFET.
100 % Rg Tested.
100 % UIS Tested.
Compliant to RoHS Directive 2002/95/EC 3.30 mm D 8D 7 D 6 D 5 S 1S 3.30 mm 2 S 3G 4 Bottom View.

SIS892DN n-channel 100-v (d-s) mosfet by Vishay - Datasheet Preview

Datasheet Details

Part number	SIS892DN
Manufacturer	Vishay
File Size	491.77 KB
Description	N-Channel 100-V (D-S) MOSFET
Datasheet	SIS892DN Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
SIS85	SMT Power Inductor	ETC
SIS85-100	SMT Power Inductor	ETC
SIS85-101	SMT Power Inductor	ETC
SIS85-102	SMT Power Inductor	ETC
SIS85-150	SMT Power Inductor	ETC

Other Datasheets by Vishay

Part Number	Description
SIS892ADN	N-Channel 100-V (D-S) MOSFET
SiS890ADN	N-Channel MOSFET
SIS890DN	N-Channel MOSFET
SIS822DNT	N-Channel MOSFET
SiS862ADN	N-Channel 60V MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

N-Channel 100 V (D-S) MOSFET SiS892DN Vishay Siliconix PRODUCT SUMMARY VDS (V) 100 RDS(on) () 0.029 at VGS = 10 V 0.042 at VGS = 4.5 V PowerPAK 1212-8 ID (A)f 30g 25 Qg (Typ.) 6.7 nC FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC 3.30 mm D 8D 7 D 6 D 5 S 1S 3.