SIS892ADN Description
() at VGS = 10 V RDS(on) max. () at VGS = 7.5 V RDS(on) max. () at VGS = 4.5 V Qg typ.
SIS892ADN Key Features
- TrenchFET® power MOSFET
- 100 % Rg and UIS tested
- Capable of operating with 5 V gate drive
- Material categorization: for definitions of pliance please see .vishay./doc?99912