SIS890DN
SIS890DN is N-Channel MOSFET manufactured by Vishay.
N-Channel 100 V (D-S) MOSFET
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 100
RDS(on) () (Max.) 0.0235 at VGS = 10 V 0.0245 at VGS = 7.5 V 0.0315 at VGS = 4.5 V
ID (A)f 30g 30g
Qg (Typ.) 9.5 nC
PowerPAK® 1212-8
3.30 mm
S 1S
3.30 mm
2 S
3G
8D 7 D 6 D 5
Bottom View
Ordering Information: SiS890DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
Features
- TrenchFET® Power MOSFET
- 100 % Rg and UIS Tested
- Capable of Operating with 5 V Gate Drive
- Material categorization: For definitions of pliance please see .vishay./doc?99912
APPLICATIONS
- Tele Bricks
- Primary side switch
- Synchronous Rectification
- Industrial
S N-Channel MOSFET
ABSOLUTE...
