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N-Channel 100 V (D-S) MOSFET
SiS890DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 100
RDS(on) () (Max.) 0.0235 at VGS = 10 V 0.0245 at VGS = 7.5 V 0.0315 at VGS = 4.5 V
ID (A)f 30g 30g
28.5
Qg (Typ.) 9.5 nC
PowerPAK® 1212-8
3.30 mm
S 1S
3.30 mm
2 S
3G
4
D
8D 7 D 6 D 5
Bottom View
Ordering Information: SiS890DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES • TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested • Capable of Operating with 5 V Gate Drive
• Material categorization: For definitions of compliance please see www.vishay.
SIS890DN Datasheet
