The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
N-Channel 60 V (D-S) MOSFET
SiS862DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 60
RDS(on) () (Max.) 0.0085 at VGS = 10 V 0.0105 at VGS = 6.0 V 0.0125 at VGS = 4.5 V
ID (A)f 40g 40g 40g
Qg (Typ.) 8.7 nC
PowerPAK® 1212-8
3.30 mm
S 1S
3.30 mm
2 S
3G
4
D
8D 7 D 6 D 5
Bottom View
Ordering Information: SiS862DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES • TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested • Capable of Operating with 5 V Gate Drive
• Material categorization: For definitions of compliance please see www.vishay.
SIS862DN Datasheet
