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Si1034CX
Vishay Siliconix
Dual N-Channel 20 V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V) RDS(on) () 0.396 at VGS = 4.5 V 20 0.456 at VGS = 2.5 V 0.546 at VGS = 1.8 V 0.760 at VGS = 1.5 V ID (A) 0.5 0.2 0.2 0.05 0.75 Qg (Typ.)
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TrenchFET® Power MOSFET 100 % Rg Tested Gate-Source ESD Protected: 1000 V Material categorization: For definitions of compliance please see www.vishay.