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P-Channel 30 V (D-S) MOSFET
Si2347DS
Vishay Siliconix
MOSFET PRODUCT SUMMARY
VDS (V)
RDS(on) () Max.
ID (A)a
0.042 at VGS = - 10 V
-5
- 30
0.054 at VGS = - 6 V
- 4.4
0.068 at VGS = - 4.5 V
- 3.9
Qg (Typ.) 6.9 nC
FEATURES • TrenchFET® Power MOSFET • 100 % Rg Tested • Material categorization:
For definitions of compliance please see www.vishay.