Si2367DS
Si2367DS is P-Channel MOSFET manufactured by Vishay.
FEATURES
- Trench FET® power MOSFET
- 100 % Rg tested
- Material categorization: for definitions of pliance please see .vishay./doc?99912
APPLICATIONS
- Load switch for portable devices
- DC/DC converter
D P-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and halogen-free
SOT-23 Si2367DS-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage
Gate-source voltage
TC = 25 °C
Continuous drain current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
TA = 70 °C
Pulsed drain current (10 μs width)
Continuous source-drain diode current
TC = 25 °C TA = 25 °C
TC = 25 °C
Maximum power dissipation
TC = 70 °C TA = 25 °C
TA = 70 °C
Operating junction and storage temperature range
TJ, Tstg
LIMIT -20 ±8 -3.8 -3
-2.8 a, b -2.2 a, b
-15 -1.4 -0.8 a, b 1.7 1.1 0.96 a, b 0.62 a, b -55 to...
