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Si4894BDY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 30 RDS(on) (Ω) 0.011 at VGS = 10 V 0.016 at VGS = 4.5 V ID (A) 12 9.8
FEATURES
• Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 % Rg Tested
D
SO-8
S S S G 1 2 3 4 Top View Ordering Information: Si4894BDY-T1-E3 (Lead (Pb)-free) Si4894BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) 8 7 6 5 D D D D G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Source Current (Diode Single Pulse Avalanche Current Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range Conduction)a L = 0.
Si4894BDY Datasheet
