ID (A)
12.5 10.2
rDS(on) (W)
0.012 @ VGS = 10 V 0.018 @ VGS = 4.5 V
D TrenchFETr Power MOSFET D Lead (Pb)-Free Version is RoHS Compliant
Pb-free Available
SO-8
S S S G 1 2 3 4 Top View Ordering Information: Si4894DY-T1 Si4894DY-T1.
E3 (Lead (Pb)-Free) 8 7 6 5 D D D D G
D
S N-Channel MOSFET.
Full PDF Text Transcription for Si4894DY (Reference)
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Si4894DY. For precise diagrams, and layout, please refer to the original PDF.
Si4894DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES ID (A) 12.5 10.2 rDS(on) (W) 0.012 @ VGS = 10 V 0.018 @ VGS = 4.5 V D TrenchFETr...
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5 10.2 rDS(on) (W) 0.012 @ VGS = 10 V 0.018 @ VGS = 4.5 V D TrenchFETr Power MOSFET D Lead (Pb)-Free Version is RoHS Compliant Pb-free Available SO-8 S S S G 1 2 3 4 Top View Ordering Information: Si4894DY-T1 Si4894DY-T1—E3 (Lead (Pb)-Free) 8 7 6 5 D D D D G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID
Si4894DY Datasheet
