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N-Channel 30-V (D-S) MOSFET
Si6404DQ
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.009 at VGS = 10 V
30 0.010 at VGS = 4.5 V
0.014 at VGS = 2.5 V
ID (A) 11 10 8.8
FEATURES • Halogen-free • TrenchFET® Power MOSFETS: 2.5 V Rated • 30 V VDS
APPLICATIONS • Battery Switch • Charger Switch
RoHS
COMPLIANT
D
TSSOP-8
D1 S2 S3 G4
Si6404DQ Top View
8D 7S 6S 5D
Ordering Information: Si6404DQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
* Source Pins 2, 3, 6 and 7 must be tied common.
G
S* N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS
± 12
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 70 °C
ID
11 8.6 8.9 6.
Si6404DQ Datasheet
